BFR949L3 Description
BFR949L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Unit 2 Aug-09-2001 BFR949L3 at TA = 25°C, unless otherwise specified.