BFR949T Description
BFR949T NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Unit 2 Oct-24-2001 BFR949T at TA = 25°C, unless otherwise specified.