ITCH24100B2 - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH24100B2
Manufacturer	Innogration
File Size	835.75 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH24100B2 Datasheet
Additional preview pages of the ITCH24100B2 datasheet.

Product details

Description

The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2300 to 2400 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 900 mA, Pulse CW, Pulse Width=100 us, Duty cycle=20% .Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) 

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Published: Aug 5, 2018 |