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ITCH24100B2E - High Power RF LDMOS FET

This page provides the datasheet information for the ITCH24100B2E, a member of the ITCH24100B2 High Power RF LDMOS FET family.

Description

The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2300 to 2400 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Datasheet preview – ITCH24100B2E

Datasheet Details

Part number ITCH24100B2E
Manufacturer Innogration
File Size 835.75 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH24100B2E Datasheet
Additional preview pages of the ITCH24100B2E datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH24100B2 Preliminary Datasheet V1.0 2300MHz-2400MHz, 100W, 28V High Power RF LDMOS FETs Description The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2300 to 2400 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH24100B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 900 mA, Pulse CW, Pulse Width=100 us, Duty cycle=20% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 2300 MHz 18.2 50.8 52.8 51.5 54.2 2350 MHz 18.3 50.6 52.8 51.4 54.6 2400 MHz 18.7 50.1 51.8 51.0 54.
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