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Innogration (Suzhou) Co., Ltd.
500-4200MHz, 8W, 28V RF Power LDMOS FETs
Description
The ITCH42008E2 is a 8-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 500MHz to 4200 MHz
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%. 3600-3800M demo：
Frequency (MHz)
Gain (dB)
P_3dB (dBm)
ηD (%)
3600
13.9
41.7
47.6
3700
15.3
41.2
46.8
3800
14.2
40.9
44.9
4000~4200M demo： Frequency (MHz) 4000
Gain (dB) 15.6
P_3dB (dBm) 40.6
ηD (%) 39.8
4100
14.8 40.8
41
4200
15.3
40.2
41.7
Highlight: The fixture is used same board different BOM.
Document Number: ITCH42008E2 Preliminary Datasheet V2.
ITCH42008E2 Datasheet
