NJ32 - Silicon Junction Field-Effect Transistor General Purpose Amplifier

InterFET

Datasheet Details

Part number	NJ32
Manufacturer	InterFET
File Size	157.10 KB
Description	Silicon Junction Field-Effect Transistor General Purpose Amplifier
Datasheet	NJ32 Datasheet
Additional preview pages of the NJ32 datasheet.

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F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ32 Process. Datasheet 2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 4 6 1.

Published: May 11, 2007 |