InterFET NJ36D
Silicon Junction Field-Effect Transistor
| Part No. | NJ36D |
|---|---|
| Datasheet | NJ36D Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage Differential Gate Source Voltage rds(on) gfs Ciss Crss e ¯N VGS1 – VGS2 NJ36D Process Min V(BR)GSS IGSS IDSS VGS(OFF) 1 – 0.5 – 25 Typ – 35 0.05 0.1 40 –8 Max Unit V nA mA V Test Conditions IG = – 1 mA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA 90 8.5 5.5 1.5 5 5 20 250 7.0 3 100 Ω mS pF pF mV ID = Ø mA, VGS = ØV VDS = 15V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDG = 15V, ID = 5 mA f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 15V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-23 NJ36D Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð4.2 V Gfs as...