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NJ36D - Silicon Junction Field-Effect Transistor

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Datasheet Details

Part number NJ36D
Manufacturer InterFET
File Size 150.29 KB
Description Silicon Junction Field-Effect Transistor
Datasheet download datasheet NJ36D Datasheet
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Full PDF Text Transcription

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F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D G Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq. Substrate is also Gate. G D S Devices in this Databook based on the NJ36D Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 www.DataSheet4U.
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