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AUIRFR4615 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • l AUIRFR4615 AUIRFU4615 D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID D D 150V 34m: 42m: 33A.

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Full PDF Text Transcription for AUIRFR4615 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFR4615. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD -96398A Features Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T...

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ng Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l AUIRFR4615 AUIRFU4615 D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID D D 150V 34m: 42m: 33A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .