Download the AUIRFSL4410Z datasheet PDF.
This datasheet also covers the AUIRFS4410Z variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
D VDSS RDS(on) typ.
G max.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
AUIRFSL4410Z
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
Note: The manufacturer provides a single datasheet file (AUIRFS4410Z-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRFSL4410Z (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL4410Z. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 96405A AUIRFS4410Z Features AUIRFSL4410Z l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Re...
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Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description HEXFET® Power MOSFET D VDSS RDS(on) typ. 100V 7.2mΩ G max. 9.0mΩ S ID 97A Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
More Datasheets from International Rectifier (now Infineon)
AUIRFSL4410Z Datasheet
