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AUIRFSL8405 - Power MOSFET

This page provides the datasheet information for the AUIRFSL8405, a member of the AUIRFS8405 Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l AUIRFS8405 AUIRFSL8405 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.9mΩ 2.3mΩ 193A 120A c.

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AUTOMOTIVE GRADE Features l l l l l l l AUIRFS8405 AUIRFSL8405 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.9mΩ 2.3mΩ 193A 120A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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