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AUIRFSL8407 - Power MOSFET

This page provides the datasheet information for the AUIRFSL8407, a member of the AUIRFB8407 Power MOSFET family.

Description

40V typ.

Features

  • Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • l G S.

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AUTOMOTIVE GRADE AUIRFB8407 AUIRFS8407 AUIRFSL8407 HEXFET® Power MOSFET D Features Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l G S Description 40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited) D D VDSS RDS(on) c Applications l l Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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