Download the AUIRFSL8408 datasheet PDF.
This datasheet also covers the AUIRFS8408 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
Note: The manufacturer provides a single datasheet file (AUIRFS8408-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRFSL8408 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL8408. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE AUIRFS8408 AUIRFSL8408 Features l Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive A...
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sistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
More Datasheets from International Rectifier (now Infineon)
AUIRFSL8408 Datasheet
