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AUIRFSL8409 - HEXFET Power MOSFET

Download the AUIRFSL8409 datasheet PDF. This datasheet also covers the AUIRFB8409 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l AUIRFB8409 AUIRFS8409 AUIRFSL8409 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS 40V RDS(on) (SMD) typ. 0.97mΩ max. 1.2mΩ 409A ID (Silicon Limited) ID (Package Limited) 195A c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFB8409_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRFSL8409 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFSL8409. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE Features l l l l l l l AUIRFB8409 AUIRFS8409 AUIRFSL8409 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating T...

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anced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS 40V RDS(on) (SMD) typ. 0.97mΩ max. 1.2mΩ 409A ID (Silicon Limited) ID (Package Limited) 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

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