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AUIRLU3110Z - Power MOSFET

Download the AUIRLU3110Z datasheet PDF. This datasheet also covers the AUIRLR3110Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 11mΩ 14mΩ 63A 42A k.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRLR3110Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRLU3114Z Power MOSFET Infineon
AUIRLU024N Power MOSFET Infineon
AUIRLU024Z Power MOSFET Infineon
AUIRLU2905 Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRLU3114Z Power MOSFET
AUIRLU024N Power MOSFET
AUIRLU024Z Power MOSFET
AUIRLU2905 HEXFET Power MOSFET
AUIRL1404L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96369 AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 11mΩ 14mΩ 63A 42A k Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .