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IRF6613 - HEXFET Power MOSFET

Description

The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6613 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt ‚ -.

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PD - 95881 IRF6613 l l l l l l l Application Specific MOSFETs Ideal for Synchronous Rectification in Isolated DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques HEXFET® Power MOSFET VDSS 40V RDS(on) max 3.4mΩ@VGS = 10V 4.1mΩ@VGS = 4.5V Qg(typ.) 42nC MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
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