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IRF6724MTRPBF - Power MOSFET

Download the IRF6724MTRPBF datasheet PDF (IRF6724MPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • to-Drain Voltage (V) 1msec 0.1 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 150 2.5 Fig11. Maximum Safe Operating Area ID, Drain Current (A) 2.0 100 ID = 100µA 1.5 50 1.0 0 25 50 75 100 125 150 TC , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature EAS, Single Pulse Avalanche Energy (mJ) 50 Fig 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6724MPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD -97131A IRF6724MPbF IRF6724MTRPbF RoHs Compliant and Halogen Free  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Dual Sided Cooling Compatible  l Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  33nC 10nC 3.9nC 34nC 20nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ MX Applicable DirectFET Outline and Substrate Outline (see p.
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