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IRF6728MPBF - Power MOSFET

Description

The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec 100 10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 0.01 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 140 120 ID, Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 1.

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Full PDF Text Transcription

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PD - 97568 HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free l IRF6728MPbF IRF6728MTRPbF V R R  Typical values (unless otherwise specified) DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V l Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance 28nC 8.7nC 3.1nC 29nC 22nC 1.8V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters S l Optimized for Sync. FET socket of Sync. Buck Converter G D D l Low Conduction and Switching Losses S l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET ™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.
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