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IRF6729MPBF - Power MOSFET

Description

The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ent (A) 100 100 10msec 10 DC 1 100µsec 1msec 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) TA = 25°C TJ = 150°C Single Pulse 0.1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 2.4 ID, Drain Current (A) 150 2.2 2.0 ID = 10mA 1.8 100 50 1.6 0 25 50 75 100.

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Full PDF Text Transcription

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PD - 96229 HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 42nC 14nC 4.9nC 40nC 29nC 1.8V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET ™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.
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