IRF6729MPBF Description
The IRF6729MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application...
IRF6729MPBF Key Features
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
- Ultra Low Package Inductance 42nC 14nC 4.9nC 40nC 29nC 1.8V
- Optimized for High Frequency Switching
- Ideal for CPU Core DC-DC Converters
- Optimized for Sync. FET socket of Sync. Buck Converter
- Low Conduction and Switching Losses
- patible with existing Surface Mount Techniques