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IRF6798MPBF - HEXFET Power MOSFET plus Schottky Diode

This page provides the datasheet information for the IRF6798MPBF, a member of the IRF6798MTRPBF HEXFET Power MOSFET plus Schottky Diode family.

Description

The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.

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Full PDF Text Transcription

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HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V l Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Dual Sided Cooling Compatible  l Low Package Inductance 50nC 16nC 6.8nC 64nC 38nC 1.8V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET ™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l IRF6798MPbF IRF6798MTRPbF www.DataSheet4U.
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