IRF6798MTRPBF - HEXFET Power MOSFET plus Schottky Diode

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6798MTRPBF
Manufacturer	International Rectifier
File Size	276.09 KB
Description	HEXFET Power MOSFET plus Schottky Diode
Datasheet	IRF6798MTRPBF Datasheet
Additional preview pages of the IRF6798MTRPBF datasheet.

Product details

Description

The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.

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Published: Jun 30, 2010 |