IRF7477PBF - HEXFET Power MOSFET

Features

perature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board Starting TJ = 25°C, L = 15mH RG = 25Ω, IAS = 8.2A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

International Rectifier

Datasheet Details

Part number	IRF7477PBF
Manufacturer	International Rectifier
File Size	128.96 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7477PBF Datasheet
Additional preview pages of the IRF7477PBF datasheet.

📁 Similar Datasheet

IRF7473TRPBF - N-Channel MOSFET (INCHANGE)
IRF740 - N-channel MOSFET (STMicroelectronics)
IRF740 - Power MOSFET (Vishay)
IRF740 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IRF7401 - Thermoelectric Cooler Controller (Analog Devices)
IRF7404 - Thermoelectric Cooler Controller (Analog Devices)
IRF740A - Power MOSFET (Vishay)
IRF740A - N-Channel MOSFET (INCHANGE)
IRF740AL - Power MOSFET (Vishay)
IRF740AS - Power MOSFET (Vishay)

Other Datasheets by International Rectifier

IRF7477 - SMPS MOSFET
IRF7470 - Power MOSFET
IRF7470PBF - Power MOSFET
IRF7471 - Power MOSFET
IRF7471PbF - SMPS MOSFET
IRF7473 - Power MOSFET
IRF7473PBF - HEXFET Power MOSFET
IRF7473PBF-1 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

PD- 95334 SMPS MOSFET Applications l High Frequency Synchronous Buck Converters for Computers and Communications l Lead-Free IRF7477PbF HEXFET® Power MOSFET VDSS 30V RDS(on) max (mW) 8.5@VGS = 10V 10@VGS = 4.

Published: May 30, 2007 |