Datasheet Details
| Part number | IRF8327SPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 277.39 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF8327SPBF Datasheet
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General Description
The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Key Features
- 1 VGS = 0V 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 250 200 150 Typical VGS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100.