IRG4BC30S-S Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 94069 IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC30S-S insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4BC30S-S
Manufacturer	International Rectifier (now Infineon)
File Size	152.77 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4BC30S-S Download (PDF)

Key Features

Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz).
Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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