IRG4BC30S Overview
PD - 91593A IRG4BC30S INSULATED GATE BIPOLAR TRANSISTOR.
IRG4BC30S Key Features
- Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-220AB package
- Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs