IRG4BC30S Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91593A IRG4BC30S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC30S insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4BC30S
Manufacturer	International Rectifier (now Infineon)
File Size	161.89 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4BC30S Download (PDF)

Key Features

Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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