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IRG4BC30S - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4BC30S INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4BC30S

Datasheet Details

Part number	IRG4BC30S
Manufacturer	International Rectifier
File Size	161.89 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30S Datasheet
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IRG4BC30S Product details

Features

Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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Published: Jul 27, 2005 |