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IRG7PH35UPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH35UPBF, a member of the IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH35UPBF

Datasheet Details

Part number	IRG7PH35UPBF
Manufacturer	International Rectifier
File Size	397.80 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH35UPBF Datasheet
Additional preview pages of the IRG7PH35UPBF datasheet.

IRG7PH35UPBF Product details

Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I.

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Published: Mar 31, 2014 |