IRHN8150 Datasheet | International Rectifier

Features : n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range PCKG. Mounting Surface Temp. Weight For footnotes refer to the last page 34 21 136 150 1.2 ±20 500 34 15 5.5 -55 to 150 300 ( for 5s) 2.6 (Typical ) Pre-Irradiation Units A W/°C V m J A m J V/ns o C g .irf. 02/01/01 Data Sheet 4 U . .. IRHN7150, JANSR2N7268U Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - - 2.0 8.0 - - - - - - - - - - - - Typ Max Units - 0.13 - - - - - - - - - - - -...