IRHN8450 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. IRHN7450 IRHN8450 JANSR2N7270U JANSH2N7270U N CHANNEL MEGA RAD HARD Product Summary Part Number IRHN7450 IRHN8450 BVDSS 500V 500V RDS(on) 0.45Ω 0.45Ω ID 11A 11A Features : n n n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Surface Mount Light Weight Absolute Maximum Ratings  Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ‚ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy - Avalanche Current ‚ Repetitive Avalanche Energy‚ Peak Diode Recovery dv/dt - Operating Junction Storage Temperature Range Lead Temperature Weight 11 7.0 44 150 1.2 ±20 500 11 15 3.5 -55 to 150 Pre-Irradiation IRHN7450, IRHN8450 Units A W/°C V m J A m J V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 2.6 (typical) g .irf. 02/01/99 Data Sheet 4 U . .. IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs...