IRHN8450 datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHN8450 |
|---|---|
| Datasheet | IRHN8450 IRHN7450 Datasheet (PDF) |
| File Size | 451.67 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | (IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
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PD - 90819A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 500Volt, 0.45Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical...
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHN8150 | RADIATION HARDENED POWER MOSFET |
| IRHN8230 | N-Channel Transistor |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
| IRHN7130 | Radiation Hardened Power MOSFET |
| IRHN7150 | Radiation Hardened Power MOSFET |
| IRHN7230 | N-Channel Transistor |
| IRHN7250 | Radiation Hardened Power MOSFET |
| IRHN7250SE | Radiation Hardened Power MOSFET |
