IRHN8230 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHN7230 IRHN8230 BVDSS 200V 200V RDS(on) 0.40Ω 0.40Ω ID 9.0A 9.0A Features : s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Pre-Radiation IRHN7230, IRHN8230 9.0 6.0 36 75 0.60 ±20 330 (see fig. 29) 9.0 7.5 5.0 (see fig. 30) -55 to 150 300 (for 5 seconds) 2.6 (typical) Units A W W/K  V m J A m J V/ns o C To Order g Data Sheet 4 U . .. Previous Datasheet Index Next Data Sheet Pre-Radiation IRHN7230, IRHN8230...