This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHN8230 |
|---|---|
| Datasheet | IRHN8230 IRHN7230 Datasheet (PDF) |
| File Size | 606.47 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | N-Channel Transistor |
|
|
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7230 IRHN8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHN8150 | RADIATION HARDENED POWER MOSFET |
| IRHN8450 | (IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
| IRHN7130 | Radiation Hardened Power MOSFET |
| IRHN7150 | Radiation Hardened Power MOSFET |
| IRHN7230 | N-Channel Transistor |
| IRHN7250 | Radiation Hardened Power MOSFET |
| IRHN7250SE | Radiation Hardened Power MOSFET |
