IRLL024N Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V- - Continuous Drain Current, VGS @ 10V- Continuous Drain Current, VGS @ 10V- Pulsed Drain Current  Power Dissipation (PCB Mount)- - Power Dissipation (PCB Mount)- Linear Derating Factor (PCB Mount)- Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy- Peak Diode Recovery dv/dt - Junction and Storage Temperature Range Max. 4.4 3.1 2.5 12 2.1 1.0 8.3 ± 16 120 3.1 0.1 5.0 -55 to + 150 Units W W m W/°C V m J A m J V/ns °C Thermal Resistance Parameter RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)- Junction-to-Amb. (PCB Mount, steady state)- - Typ. 90 50 Max. 120 60 Units °C/W - When mounted on FR-4 board using minimum remended footprint. - - When mounted on 1 inch square copper board, for parison with other SMD devices. .irf. 6/15/99 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source...