IRLL024Z Datasheet | International Rectifier

Features l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 60mΩ ID = 5.0A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. SOT-223 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) i Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Parameter Max. 5.0 4.0 40 2.8 1.0 0.02 ± 16 Units Power Dissipation Linear Derating Factor Gate-to-Source Voltage i j ™ i i d h W W/°C V m J A m J EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current 21 38 See Fig.12a, 12b, 15, 16 -55 to + 150 Single Pulse Avalanche Energy Tested Value Ù Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C Thermal Resistance RθJA RθJA i Junction-to-Ambient (PCB mount, steady state) j Junction-to-Ambient (PCB mount, steady state) Parameter Typ. - - - - - - Max. 45 120 Units °C/W .irf....