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IRLL024NQ - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET in a SOT-223 package utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of this Automotive qualified HEXFET Power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLL024N HEXFET Power MOSFET
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IRLL110PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD-94152 AUTOMOTIVE MOSFET Typical Applications q q q q q IRLL024NQ HEXFET® Power MOSFET D Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats Cruise Control Air Bags Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Dynamic dv/dt Rating Automotive [Q101] Qualified G VDSS = 55V RDS(on) = 0.065Ω Benefits q q q q q q S ID = 3.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET in a SOT-223 package utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.