IRLL024NQ Datasheet | International Rectifier

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET in a SOT-223 package utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this Automotive qualified HEXFET Power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SOT-223 package is designed for surface mount and the enlarged tab provides improved thermal characteristics making it ideal in a variety of power applications. Power dissipation of 1.0W is possible in a typical surface mount application. Available in Tape & Reel. SOT-223 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current Q Power Dissipation S Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy T Avalanche Current Q Repetitive Avalanche Energy V Peak Diode Recovery dv/dt U Junction and Storage Temperature Range Max. 3.1 2.6 12 1.3 8.3 ±16 87 See Fig.16c, 16d, 19, 20 9.9 -55 to + 175 Units A W m W/°C V m J A m J V/ns °C Thermal Resistance Parameter RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)- Junction-to-Amb. (PCB Mount, steady state)- - Typ. 90 50 Max. 120 60 Units °C/W - When mounted on FR-4 board using minimum remended footprint. - - When mounted on 1 inch square copper board, for parison with other SMD devices. .irf. 03/16/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...