IRLL024ZPbF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 95990A IRLL024ZPb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 60mΩ S ID = 5.0A SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C i Continuous Drain Current, VGS @ 10V (Silicon Limited) i Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current i Power Dissipation j Power Dissipation i Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) h Single Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current g EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter i RθJA Junction-to-Ambient (PCB mount, steady state) j RθJA Junction-to-Ambient (PCB mount, steady state) .irf. Max. 5.0 4.0 40 2.8 1.0 0.02 ± 16 21 38 See Fig.12a, 12b, 15, 16 -55 to + 150 Typ. - - - - - - Max. 45 120 Units W W/°C V m J A m J °C Units °C/W 09/27/10 IRLL024ZPb...