Datasheet4U Logo Datasheet4U.com

IRLMS4502 - HEXFET Power MOSFET

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

📥 Download Datasheet

Datasheet preview – IRLMS4502

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 93759B IRLMS4502 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -12V D 2 5 D G 3 4 S RDS(on) = 0.042Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium.
Published: |