IRF6712STRPBF Description
The IRF6712SPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when...
IRF6712STRPBF Key Features
- RoHS pliant and Halogen Free
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Ideal for CPU Core DC-DC Converters DirectFET Power MOSFET Typical values (unless otherwise specified) VD
- Optimized for both Sync.FET and some Control FET application
- Low Conduction and Switching Losses