IRF6718L2TRPBF Description
The IRF6718L2TRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,.
IRF6718L2TRPBF Key Features
- RoHS pliant Containing No Lead and Bromide
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Very Low RDS(ON) for Reduced Conduction Losses
- Optimized for Active O-Ring / Efuse Applications