IRF6798MPBF Description
The IRF6798MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application...
IRF6798MPBF Key Features
- Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
- Dual Sided Cooling patible
- Low Package Inductance 50nC 16nC 6.8nC 64nC 38nC 1.8V
- Optimized for High Frequency Switching
- Ideal for CPU Core DC-DC Converters
- Optimized for Sync. FET socket of Sync. Buck Converter
- Low Conduction and Switching Losses
- patible with existing Surface Mount Techniques