IRF7477PBF Description
30 ± 20 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W Notes through are on page 8 .irf. 1 09/21/04 IRF7477PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7477PBF Key Features
- High Frequency Synchronous Buck Converters for puters and munications
- Lead-Free IRF7477PbF HEXFET® Power MOSFET VDSS 30V RDS(on) max (mW) 8.5@VGS = 10V 10@VGS = 4.5V ID 14A 11A
- Very Low RDS(on)
- Fully Characterized Avalanche Voltage and Current
- Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits