IRF8302MPBF Description
The IRF8302MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application...
IRF8302MPBF Key Features
- RoHs pliant and Halogen-Free
- Integrated Monolithic Schottky Diode
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching HEXFET® Power MOSFET plus Schottky Diode Typical values (unless o
- Optimized for Sync. FET socket of Sync. Buck Converter
- Low Conduction and Switching Losses