IRGP4063-EPBF Description
PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR.
IRGP4063-EPBF Key Features
- Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Squa
IRGP4063-EPBF Applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation