IRGP4063D-EPBF Description
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGP4063D-EPBF Key Features
- Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Squa
IRGP4063D-EPBF Applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation