IRGP4063DPBF Description
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGP4063DPBF Key Features
- Low VCE (ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of the parts tested for 4X rated current (ILM)
- Positive VCE (ON) Temperature co-efficient
- Ultra fast soft Recovery Co-Pak Diode
- Tight parameter distribution
- Lead Free Package
IRGP4063DPBF Applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation