IRGP4066-EPBF Description
PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR.
IRGP4066-EPBF Key Features
- Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Squa
IRGP4066-EPBF Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation