IRGR2B60KDPBF Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF C VCES = 600V IC = 3.7A, TC = 100°C G.
IRGR2B60KDPBF Key Features
- Low VCE (ON) Non Punch Through IGBT technology - Low Diode VF - 10µs Short Circuit Capability - Square RBSOA - Ult