IRFD120 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: IRFD120 Data Sheet July 1999 File Number 2315.3 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17401.

Datasheet Details

Part number	IRFD120
Manufacturer	Intersil (now Renesas)
File Size	52.27 KB
Description	N-Channel Power MOSFET
Datasheet	IRFD120_IntersilCorporation.pdf

Key Features

1.3A, 100V.
rDS(ON) = 0.300Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD120.

IRFD120 Distributor

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