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RFD8P06 - P-Channel Power MOSFET

Features

  • 8A, 60V.
  • rDS(ON) = 0.300Ω.
  • Temperature Compensating PSPICE® Model.
  • 2kV ESD Protected.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP8P06E RFD8P06ESM RFD8P06E.

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Other Datasheets by Intersil Corporation

Full PDF Text Transcription

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RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 File Number 3937.5 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49044. Features • 8A, 60V • rDS(ON) = 0.
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