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RFD8P06LE - P-Channel Power MOSFET

Features

  • 8A, 60V.
  • rDS(ON) = 0.300Ω.
  • 2kV ESD Protected.
  • Temperature Compensating PSPICE® Model.
  • PSPICE Thermal Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature Ordering Information PART NUMBER RFD8P06LE RFD8P06LESM RFP8P06LE.

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Other Datasheets by Intersil Corporation

Full PDF Text Transcription

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RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203. Features • 8A, 60V • rDS(ON) = 0.
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