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RFD8P06ESM Datasheet P-Channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 File Number 3937.5 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors.

Key Features

  • 8A, 60V.
  • rDS(ON) = 0.300Ω.
  • Temperature Compensating PSPICE® Model.
  • 2kV ESD Protected.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP8P06E RFD8P06ESM RFD8P06E.