RFD8P06E Datasheet | Intersil

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 File Number 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate ESD protection and are designed to withstand 2kV (Human...