RFM6N45 Datasheet | Intersil

Semiconductor RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. September 1998 Features - 6A, 450V and 500V - rDS(ON) = 1.250Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedence -...