Datasheet Summary
RFP2N08L, RFP2N10L
Data Sheet July 1999 File Number
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924.
Features
- 2A, 80V and 100V
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